Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
N-Channel
V DD = 10 V, I D = 1 A,
V GEN = 10 V, R GEN = 6 ?
P-Channel
V DD = -10 V, I D = -1 A,
V GEN = -10 V, R GEN = 6 ?
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
10
9
13
21
21
21
5
15
40
20
40
50
90
50
ns
ns
ns
ns
P-Ch
8
50
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V DS = 10 V,
I D = 3.7 A, V GS = 10 V
P-Channel
V DS = -10 V,
I D = -2.9 A, V GS = -10 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
9.5
10
1.5
1.6
3.3
27
25
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
P-Ch
3.4
I S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
1.2
A
P-Ch
-1.2
V SD
Drain-Source Diode Forward
Voltage
V GS = 0 V, I S = 1.25 A
V GS = 0 V, I S = -1.25 A
(Note 2)
(Note 2)
N-Ch
P-Ch
0.8
-0.8
1.3
-1.3
V
t rr
Reverse Recovery Time
V GS = 0 V, I F = 1.25 A, dI F /dt = 100 A/μs
N-Ch
75
ns
V GS = 0 V, I F = -1.25 A, dI F /dt = 100 A/μs
P-Ch
100
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
P D ( t ) =
T J ? T A
R θ J A ( t )
=
T J ? T A
R θ J C + R θ CA ( t )
= I 2 D ( t ) × R DS ( ON )
T J
Typical R θ JA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78 o C/W when mounted on a 0.5 in 2 pad of 2oz cpper.
b. 125 o C/W when mounted on a 0.02 in 2 pad of 2oz cpper.
c. 135 o C/W when mounted on a 0.003 in 2 pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS9952A.SAM
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相关代理商/技术参数
NDS9952A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CHANNEL MOSFET, 30V, SOIC
NDS9952A_NL 制造商:Freescale Semiconductor 功能描述:
NDS9952A_Q 功能描述:MOSFET SO-8 N&P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9952A-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Series Dual N and P-Channel 30 V 0.08 Ohm Field Effect Transistor -SOIC-8
NDS9953A 功能描述:MOSFET SO-8 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9953A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
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NDS9955 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube